DISORDERING OF ALGAAS/GAAS QUANTUM-WELL STRUCTURES USING LOW-DOSE OXYGEN IMPLANTATION

被引：9

作者：

WEISS, BL ^{[1
]}

BRADLEY, IV ^{[1
]}

WHITEHEAD, NJ ^{[1
]}

ROBERTS, JS ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 11期

关键词：

D O I：

10.1063/1.350508

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the photoluminescence study of low-energy, low-dose oxygen implantation induced compositional disordering of AlGaAs/GaAs quantum well structures. Significant disordering of both single and multiple AlGaAs/GaAs quantum wells has been achieved using low-energy (155 keV) oxygen ion implantation with doses as small as 5 x 10(13) cm-2 after a moderate annealing step. These doses are significantly lower than those reported previously (500 keV and 10(16) cm-2).

引用

页码：5715 / 5717

页数：3

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