DISORDERING OF ALGAAS/GAAS QUANTUM-WELL STRUCTURES USING LOW-DOSE OXYGEN IMPLANTATION

被引：9
|
作者：
WEISS, BL [1 ]
BRADLEY, IV [1 ]
WHITEHEAD, NJ [1 ]
ROBERTS, JS [1 ]
机构：
[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
来源：
JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 11期
关键词：
D O I：
10.1063/1.350508
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the photoluminescence study of low-energy, low-dose oxygen implantation induced compositional disordering of AlGaAs/GaAs quantum well structures. Significant disordering of both single and multiple AlGaAs/GaAs quantum wells has been achieved using low-energy (155 keV) oxygen ion implantation with doses as small as 5 x 10(13) cm-2 after a moderate annealing step. These doses are significantly lower than those reported previously (500 keV and 10(16) cm-2).
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收藏
页码：5715 / 5717
页数：3
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