GALLIUM-ARSENIDE DEVICES

被引:0
|
作者
MORKOC, H
机构
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:69 / 69
页数:1
相关论文
共 50 条
  • [31] COULOMETRIC TITRATION OF GALLIUM IN GALLIUM-ARSENIDE
    NAKAYAMA, S
    MIZUSUNA, H
    HARADA, S
    [J]. BUNSEKI KAGAKU, 1990, 39 (05) : 307 - 311
  • [32] GALLIUM ALUMINUM ARSENIDE GALLIUM-ARSENIDE INTEGRATED OPTICAL REPEATER
    BARCHAIM, N
    LAU, KY
    URY, I
    YARIV, A
    [J]. PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1984, 466 : 65 - 68
  • [33] HALL FACTOR OF GALLIUM-ARSENIDE
    BORISOVA, LA
    KRAVCHENKO, AF
    KOT, KN
    SKOK, EM
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (05): : 693 - +
  • [34] DIFFUSION OF CHROMIUM IN GALLIUM-ARSENIDE
    DEAL, MD
    STEVENSON, DA
    [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (07) : 2398 - 2407
  • [35] EPITAXIAL GALLIUM-ARSENIDE GROWTH
    不详
    [J]. ELECTRONIC ENGINEERING, 1979, 51 (627): : 10 - 10
  • [36] DISLOCATION STATES IN GALLIUM-ARSENIDE
    JONES, R
    [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 39 (01): : 21 - 25
  • [37] PHOSPHORUS DIFFUSION IN GALLIUM-ARSENIDE
    JAIN, GC
    SADANA, DK
    DAS, BK
    [J]. SOLID-STATE ELECTRONICS, 1976, 19 (08) : 731 - 736
  • [38] GALLIUM-ARSENIDE ON SILICON - A REVIEW
    MORKOC, H
    UNLU, H
    ZABEL, H
    OTSUKA, N
    [J]. SOLID STATE TECHNOLOGY, 1988, 31 (03) : 71 - 76
  • [39] IMPURITY THERMOREFLECTION OF GALLIUM-ARSENIDE
    REZNICHENKO, MF
    SALMAN, EG
    VERTOPRAKHOV, VN
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (06): : 741 - 743
  • [40] GALLIUM-ARSENIDE TECHNOLOGY ON THE MOVE
    BOND, J
    [J]. COMPUTER DESIGN, 1985, 24 (01): : 72 - &