LOW-TEMPERATURE DEPOSITION OF SIC FILMS BY MICROWAVE-PLASMA CHEMICAL-VAPOR-DEPOSITION

被引：0

作者：

AOYAMA, S ^{[1
]}

SHIBATA, N ^{[1
]}

机构：

[1] JAPAN FINE CERAM CTR,ATSUTA KU,NAGOYA,AICHI 456,JAPAN

来源：

NIPPON SERAMIKKUSU KYOKAI GAKUJUTSU RONBUNSHI-JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | 1994年 / 102卷 / 01期

关键词：

LOW-TEMPERATURE COATING; MICROWAVE-PLASMA; CHEMICAL VAPOR DEPOSITION; SIC; POLYCRYSTALLINE FILMS;

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Poly-crystalline beta-SiC films have been deposited on Si (100) at 400 degrees C by the microwave-plasma chemical vapor deposition using CH3Cl and SiH4 as source gases. A single crystal him was obtained at 725 degrees C. The deposition rate increased with decreasing substrate temperature, and with increasing gas composition ratio [CH3Cl]/[SiH4], which is larger than 1. The crystal had a very few bonded-hydrogen, but contained a small amount of residual Cl. Si-rich films were obtained at low substrate temperatures and low [CH3Cl]/[SiH4] ratios. The obtained results indicate that the film deposition process is a CH3Cl decomposition-limited.

引用

页码：13 / 17

页数：5

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