LOW-TEMPERATURE DEPOSITION OF SIC FILMS BY MICROWAVE-PLASMA CHEMICAL-VAPOR-DEPOSITION

被引：0
|
作者：
AOYAMA, S [1 ]
SHIBATA, N [1 ]
机构：
[1] JAPAN FINE CERAM CTR,ATSUTA KU,NAGOYA,AICHI 456,JAPAN
来源：
NIPPON SERAMIKKUSU KYOKAI GAKUJUTSU RONBUNSHI-JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | 1994年 / 102卷 / 01期
关键词：
LOW-TEMPERATURE COATING; MICROWAVE-PLASMA; CHEMICAL VAPOR DEPOSITION; SIC; POLYCRYSTALLINE FILMS;
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Poly-crystalline beta-SiC films have been deposited on Si (100) at 400 degrees C by the microwave-plasma chemical vapor deposition using CH3Cl and SiH4 as source gases. A single crystal him was obtained at 725 degrees C. The deposition rate increased with decreasing substrate temperature, and with increasing gas composition ratio [CH3Cl]/[SiH4], which is larger than 1. The crystal had a very few bonded-hydrogen, but contained a small amount of residual Cl. Si-rich films were obtained at low substrate temperatures and low [CH3Cl]/[SiH4] ratios. The obtained results indicate that the film deposition process is a CH3Cl decomposition-limited.
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页码：13 / 17
页数：5
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