SPATIAL-RESOLUTION OF SILICON MICROSTRIP DETECTOR FOR PARTICLES WITH LARGE INCIDENT ANGLE

被引：6

作者：

HANAI, H

HABA, J

HIGASHI, N

IKEDA, H

KOIKE, S

MATSUDA, T

OZAKI, H

TANAKA, M

TSUBOYAMA, T

NAKAMURA, M

SAITO, K

OKUNO, S

KISHIDA, T

机构：

[1] NATL LAB HIGH ENERGY PHYS,KEK,OHO,IBARAKI 305,JAPAN

[2] NAGOYA UNIV,DEPT PHYS,CHIKUSA KU,NAGOYA,AICHI 464,JAPAN

[3] GRAD UNIV ADV STUDIES,DEPT ACCELERATOR SCI,IBARAKI 305,JAPAN

[4] UNIV TOKYO,DEPT PHYS,BUNKYO KU,TOKYO 113,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1992年 / 314卷 / 03期

关键词：

D O I：

10.1016/0168-9002(92)90237-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Spatial resolution of a silicon microstrip detector was investigated experimentally for the charged particles with incident angles of 0-degrees, 10-degrees, 30-degrees, 50-degrees, 60-degrees, 70-degrees and 75-degrees. The resolution for normal incidence was found to be 5.7-mu-m with the standard centroid technique for induced charge. In order to achieve better resolution for large angle incidence, a new centroid method was developed, with which the position resolution of 40-mu-m was achieved for the particles with incident angle of 75-degrees.

引用

页码：455 / 460

页数：6

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