DIELECTRIC AND INTERFACE PROPERTIES OF PYROLYTIC ALUMINUM OXIDE FILMS ON SILICON SUBSTRATES

被引:12
|
作者
DUFFY, MT
CARNES, JE
RICHMAN, D
机构
来源
METALLURGICAL TRANSACTIONS | 1971年 / 2卷 / 03期
关键词
D O I
10.1007/BF02662719
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
引用
收藏
页码:667 / +
页数:1
相关论文
共 50 条
  • [41] Dielectric properties of ceria and yttria-stabilized zirconia thin films grown on silicon substrates
    Hartmanova, M
    Gmucova, K
    Thurzo, I
    SOLID STATE IONICS, 2000, 130 (1-2) : 105 - 110
  • [42] Luminescence of epitaxial cerium oxide films on silicon substrates
    Morshed, A.H.
    Moussa, M.E.
    El-Masry, N.
    Bedair, S.M.
    Materials Science Forum, 1997, 239-241 : 291 - 294
  • [43] Luminescence of epitaxial cerium oxide films on silicon substrates
    Morshed, AH
    Moussa, ME
    ElMasry, N
    Bedair, SM
    PROCEEDINGS OF THE 13TH INTERNATIONAL CONFERENCE ON DEFECTS IN INSULATING MATERIALS - ICDIM 96, 1997, 239- : 291 - 294
  • [44] Influence of Orientation of a Silicon Substrate with a Buffer Silicon Carbide Layer on Dielectric and Polar Properties of Aluminum Nitride Films
    O. N. Sergeeva
    A. V. Solnyshkin
    D. A. Kiselev
    T. S. Il’ina
    S. A. Kukushkin
    Sh. Sh. Sharofidinov
    E. Yu. Kaptelov
    I. P. Pronin
    Physics of the Solid State, 2019, 61 : 2386 - 2391
  • [45] PLASMA ANODIZATION TO EXHAUSTION OF THIN ALUMINUM FILMS ON SILICON SUBSTRATES
    SAAD, A
    SWANSON, JG
    THIN SOLID FILMS, 1979, 61 (03) : 355 - 362
  • [46] Ion migration and dielectric effects in aluminum oxide films
    Ruesse, S., 1600, Elsevier Science Publishers B.V., Amsterdam, Netherlands (72):
  • [47] Influence of Orientation of a Silicon Substrate with a Buffer Silicon Carbide Layer on Dielectric and Polar Properties of Aluminum Nitride Films
    Sergeeva, O. N.
    Solnyshkin, A. V.
    Kiselev, D. A.
    Il'ina, T. S.
    Kukushkin, S. A.
    Sharofidinov, Sh. Sh.
    Kaptelov, E. Yu.
    Pronin, I. P.
    PHYSICS OF THE SOLID STATE, 2019, 61 (12) : 2386 - 2391
  • [48] THE INFLUENCE OF AN ALUMINUM OVERLAYER ON THE INTERACTION OF TUNGSTEN FILMS WITH SILICON SUBSTRATES
    PAULEAU, Y
    DASSAPA, FC
    LAMI, P
    OBERLIN, JC
    ROMAGNA, F
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (03): : 817 - 824
  • [49] THE INTERACTION OF HAFNIUM AND ALUMINUM THIN-FILMS ON SILICON SUBSTRATES
    RAAIJMAKERS, IJMM
    DAAMS, JLC
    THIN SOLID FILMS, 1985, 125 (3-4) : 335 - 340
  • [50] Dielectric properties of holmium oxide films
    Wiktorczyk, T
    Nitsch, K
    IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION, 2001, 8 (03) : 447 - 453