DIELECTRIC AND INTERFACE PROPERTIES OF PYROLYTIC ALUMINUM OXIDE FILMS ON SILICON SUBSTRATES

被引：12

|

作者：

DUFFY, MT

CARNES, JE

RICHMAN, D

机构：

来源：

METALLURGICAL TRANSACTIONS | 1971年 / 2卷 / 03期

关键词：

D O I：

10.1007/BF02662719

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

引用

收藏

页码：667 / +

页数：1

相关论文

共 50 条

[31] Interface engineering of cBN films deposited on silicon substrates
Yang, HS
Iwamoto, C
Yoshida, T
JOURNAL OF APPLIED PHYSICS, 2003, 94 (02) : 1248 - 1251
[32] DEPOSITION OF PYROLYTIC ALUMINUM-OXIDE FILMS ON SI, GAAS, AND INP
MITTOV, ON
FETISOVA, SV
GADEBSKAYA, TA
NEVRYUEV, II
AGAPOV, BL
INORGANIC MATERIALS, 1991, 27 (05) : 744 - 747
[33] RF SPUTTERED ALUMINUM OXIDE FILMS ON SILICON
SALAMA, CAT
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) : 913 - &
[34] SPECTROPHOTOMETRIC DETERMINATION OF ALUMINUM IN MULTICOMPONENT FILMS ON ALUMINUM-OXIDE SUBSTRATES
SHAKHVERDI, NM
NAUMOVA, ON
TUMANOV, AA
INDUSTRIAL LABORATORY, 1989, 55 (03): : 250 - 253
[35] MEASUREMENT OF THIN OXIDE FILMS ON ALUMINUM SUBSTRATES.
Dorsey Jr., G.A.
Plating, 1973, 60 (01): : 35 - 42
[36] CRYSTALLIZATION PROPERTIES OF DIELECTRIC FILMS ON SILICON
ALEKSANDROV, LN
EDELMAN, FL
IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1977, 41 (11): : 2310 - 2314
[37] INTERFACE AND DIELECTRIC-PROPERTIES OF THE N-INDIUM-PHOSPHIDE-SILICON-OXIDE SYSTEM
ZEISSE, CR
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1466 - 1469
[38] Electronic and dielectric properties of a suboxide interlayer at the silicon-oxide interface in MOS devices
Giustino, F
Pasquarello, A
SURFACE SCIENCE, 2005, 586 (1-3) : 183 - 191
[39] PYROLYTIC GROWTH OF SILICON OXIDE
SANDOR, J
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (03) : C72 - C72
[40] Effects of surface oxide layer on thermal cycling in aluminum alloy thin films deposited on silicon substrates
Utsunomiya, S
Koike, J
Maruyama, K
STRESS INDUCED PHENOMENA IN METALLIZATION - FOURTH INTERNATIONAL WORKSHOP, 1998, (418): : 283 - 288

← 1 2 3 4 5 →