GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTORS BY ION-IMPLANTATION

被引：27

作者：

WELCH, BM ^{[1
]}

EISEN, FH ^{[1
]}

HIGGINS, JA ^{[1
]}

机构：

[1] ROCKWELL INT,SCI CTR,THOUSAND OAKS,CA 91360

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 08期

关键词：

D O I：

10.1063/1.1663838

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3685 / 3687

页数：3

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