HIGH-TEMPERATURE ION-IMPLANTATION IN DIAMOND

被引：18
|
作者：
LEE, YH
BROSIOUS, PR
CORBETT, JW
机构：
[1] SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222
[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1978年 / 50卷 / 01期
关键词：
D O I：
10.1002/pssa.2210500127
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：237 / 242
页数：6
相关论文
共 50 条
  • [31] Ion-implantation into alpha-SiC epilayers and application to high-temperature, high-voltage devices
    Kimoto, T
    Itoh, A
    Inoue, N
    Yaguchi, S
    Matsunami, H
    [J]. COMPOUND SEMICONDUCTORS 1995, 1996, 145 : 609 - 614
  • [32] GRAPHITIZATION OF DIAMOND FILMS INDUCED BY ION-IMPLANTATION
    ZHANG, XK
    FANG, F
    GUO, JG
    YAO, YF
    ZHOU, ZY
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1992, 129 (02): : K97 - K99
  • [33] VOLUME EXPANSION OF DIAMOND DURING ION-IMPLANTATION
    PRINS, JF
    DERRY, TE
    SELLSCHOP, JPF
    [J]. PHYSICAL REVIEW B, 1986, 34 (12): : 8870 - 8874
  • [34] EFFECTS OF ION-IMPLANTATION ON POLYCRYSTALLINE DIAMOND FILMS
    ZHANG, XK
    GUO, JG
    YAO, YF
    FANG, F
    [J]. VACUUM, 1992, 43 (11) : 1047 - 1049
  • [35] DOPING OF POLYCRYSTALLINE DIAMOND BY BORON ION-IMPLANTATION
    KALISH, R
    UZANSAGUY, C
    SAMOILOFF, A
    LOCHER, R
    KOIDL, P
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (19) : 2532 - 2534
  • [36] STUDY OF DEFECTS INTRODUCED BY ION-IMPLANTATION IN DIAMOND
    MORHANGE, JF
    BESERMAN, R
    BOURGOIN, JC
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (04) : 544 - 548
  • [37] MATERIALS MODIFICATION - DOPING OF DIAMOND BY ION-IMPLANTATION
    PRINS, JF
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 11 (1-4): : 219 - 226
  • [38] HIGH-ENERGY ION-IMPLANTATION INTO DIAMOND AND CUBIC BORON-NITRIDE
    ZAITSEV, AM
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 11 (1-4): : 179 - 190
  • [39] FORMATION OF DEFECTS IN SYNTHETIC DIAMOND AS A RESULT OF HIGH-ENERGY ION-IMPLANTATION
    VARICHENKO, VS
    VOROBEV, ED
    ZAITSEV, AM
    LAPTEV, VA
    SAMOILOVICH, MI
    SKURATOV, VA
    STELMAKH, VF
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (06): : 668 - 671
  • [40] HIGH-ENERGY ION-IMPLANTATION INTO DIAMOND AND CUBIC BORON-NITRIDE
    ZAITSEV, AM
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 62 (01): : 81 - 98
12345