FORMATION OF DEFECTS IN SYNTHETIC DIAMOND AS A RESULT OF HIGH-ENERGY ION-IMPLANTATION

被引：0
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作者：
VARICHENKO, VS
VOROBEV, ED
ZAITSEV, AM
LAPTEV, VA
SAMOILOVICH, MI
SKURATOV, VA
STELMAKH, VF
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来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1987年 / 21卷 / 06期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：668 / 671
页数：4
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