ELECTRICAL INSTABILITIES OF AL-ANODIC OXIDE-N-GAAS MOS STRUCTURES AND THE EFFECT OF ANNEALING

被引：7

作者：

ARORA, BM ^{[1
]}

NARSALE, AM ^{[1
]}

机构：

[1] BOMBAY UNIV, DEPT PHYS, BOMBAY 400098, INDIA

来源：

THIN SOLID FILMS | 1979年 / 56卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(79)90060-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：153 / 161

页数：9

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