ELECTRICAL INSTABILITIES OF AL-ANODIC OXIDE-N-GAAS MOS STRUCTURES AND THE EFFECT OF ANNEALING

被引：7
|
作者：
ARORA, BM [1 ]
NARSALE, AM [1 ]
机构：
[1] BOMBAY UNIV, DEPT PHYS, BOMBAY 400098, INDIA
来源：
THIN SOLID FILMS | 1979年 / 56卷 / 1-2期
关键词：
D O I：
10.1016/0040-6090(79)90060-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：153 / 161
页数：9
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