THEORETICAL-ANALYSIS OF D-C CHARACTERISTICS OF SEMICONDUCTOR COUPLED HIGH-TC SUPERCONDUCTING MISFETS

被引：1

作者：

JIANG, JF ^{[1
]}

PEI, J ^{[1
]}

TANG, YS ^{[1
]}

YU, X ^{[1
]}

JIANG, HM ^{[1
]}

ZANG, GF ^{[1
]}

WANG, S ^{[1
]}

机构：

[1] SHANGHAI IND UNIV,SHANGHAI 200030,PEOPLES R CHINA

来源：

CRYOGENICS | 1990年 / 30卷 / 12期

关键词：

HIGH TC SUPERCONDUCTORS; CURRENT - VOLTAGE CHARACTERISTICS; MISFETS;

D O I：

10.1016/0011-2275(90)90220-7

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

This paper presents a theoretical analysis of the d.c. characteristics of the semiconductor coupled high T(c) superconductor MISFET (SCHTSMISFET). Source and drain are made from a high T(c) oxide superconductor such as YBCO, BSCCO or TBCCO. Semiconductors such as Si, GaAs, InAs and InSb are used as substrate. A semiconductor inversion layer lies between source and drain electrodes as a coupling range. D.c. characteristics include those of current - voltage, voltage amplification and inverter. Results of the study show that the SCHTSMISFET has encouraging characteristics for use in microelectronics.

引用

页码：1129 / 1133

页数：5

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