CHARACTERISTICS OF A NIO BARRIER LAYER FOR HIGH-TC SUPERCONDUCTING TUNNEL JUNCTION

被引：0
|
作者：
MORIYA, M
KOBAYASHI, T
GOTO, T
机构：
[1] University of Electro-Communications, Chofu-Shi, Tokyo
来源：
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1995年 / 5卷 / 02期
关键词：
D O I：
10.1109/77.403059
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Characteristics of a NiO barrier layer for high-Tc superconducting tunnel junctions were investigated. Bi2Sr2CaCu2Ox (BSCCO) films were deposited on a MgO or SrTiO3 substrate using a dc hollow cathode sputtering system. In situ superconducting BSCCO films deposited in Ar + 20% O-2 gas at Ts = 680 degrees C on a MgO substrate were c-axis oriented 2212 phase. A NiO layer was formed by reactive sputtering in Ar + 20%O-2 gas using a Ni hollow cathode, and the layer on the BSCCO film was of (100) and (110) orientation. The current-voltage characteristics of an Ag/NiO/BSCCO junction with a NiO barrier layer 5nm thick were investigated. In the G-V curves of some junctions, a zero bias conductance peak was observed. It is assumed that this behavior is probably due to the nonuniform thickness of the barrier layer. The junction with a thicker barrier layer (18nm) showed tunnel current characteristics without anomaly.
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页码：2358 / 2360
页数：3
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