ELECTRICAL CHARACTERISTICS OF CARBON-DOPED GAAS

被引：3
|
作者：
KIM, SI [1 ]
KIM, MS [1 ]
KIM, Y [1 ]
EOM, KS [1 ]
MIN, SK [1 ]
LEE, CC [1 ]
机构：
[1] KOREA ADV INST SCI & TECHNOL,DEPT PHYS,TAEJON 305701,SOUTH KOREA
来源：
JOURNAL OF MATERIALS SCIENCE LETTERS | 1993年 / 12卷 / 16期
关键词：
D O I：
10.1007/BF00506326
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：1251 / 1252
页数：2
相关论文
共 50 条
  • [41] GAAS PSEUDOHETEROJUNCTION BIPOLAR-TRANSISTOR WITH A HEAVILY CARBON-DOPED BASE
    NOZAKI, S
    SAITO, K
    SHIRAKASHI, J
    QI, M
    YAMADA, T
    TOKUMITSU, E
    KONAGAI, M
    TAKAHASHI, K
    MATSUMOTO, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B): : 3840 - 3842
  • [42] High performance carbon-doped AlGaAu/GaAs HBTs grown by MOCVD
    Sato, Hiroya
    Twynan, John K.
    Kinosada, Toshiaki
    Shimizi, Masafumi
    Tomitri, Takashi
    Shapu Giho/Sharp Technical Journal, 1991, (51): : 17 - 20
  • [43] Acceptor reactivation kinetics in heavily carbon-doped GaAs epitaxial layers
    Mimila-Arroyo, J
    Bland, SW
    APPLIED PHYSICS LETTERS, 2000, 77 (08) : 1164 - 1166
  • [44] CHEMICAL BEAM EPITAXIAL-GROWTH OF STRAINED CARBON-DOPED GAAS
    CHIU, TH
    CUNNINGHAM, JE
    DITZENBERGER, JA
    JAN, WY
    APPLIED PHYSICS LETTERS, 1990, 57 (02) : 171 - 173
  • [45] HEAVILY CARBON-DOPED GAAS GROWN BY LOW-PRESSURE OMVPE
    SHIMAZU, M
    KIMURA, H
    KAMON, K
    SHIRAKAWA, T
    MURAI, S
    TADA, K
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (112): : 173 - 178
  • [46] STRAIN RELAXATION AND COMPENSATION DUE TO ANNEALING IN HEAVILY CARBON-DOPED GAAS
    HANNA, MC
    MAJERFELD, A
    SZMYD, DM
    APPLIED PHYSICS LETTERS, 1991, 59 (16) : 2001 - 2003
  • [47] PASSIVATION OF CARBON ACCEPTORS DURING GROWTH OF CARBON-DOPED GAAS, INGAAS, AND HBTS BY MOCVD
    STOCKMAN, SA
    HANSON, AW
    LICHTENTHAL, SM
    FRESINA, MT
    HOFLER, GE
    HSIEH, KC
    STILLMAN, GE
    JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (12) : 1111 - 1118
  • [48] Carbon-related defects in carbon-doped GaAs by high-temperature annealing
    Fushimi, H
    Wada, K
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) : 1208 - 1213
  • [49] INCORPORATION OF INTERSTITIAL CARBON DURING GROWTH OF HEAVILY CARBON-DOPED GAAS BY MOVCD AND MOMBE
    HOFLER, GE
    BAILLARGEON, JN
    KLATT, JL
    HSIEH, KC
    AVERBACK, RS
    CHENG, KY
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1992, (120): : 631 - 634
  • [50] PSEUDO-HETEROEPITAXIAL PROBLEMS IN HEAVILY CARBON-DOPED GAAS GROWN ON GAAS SUBSTRATES BY MOMBE
    NOZAKI, S
    MIYAKE, R
    AKATSUKA, T
    YAMADA, T
    FUKAMACHI, T
    SAITO, K
    KONAGAI, M
    TAKAHASHI, K
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (07) : 30 - 30
12345