PSEUDO-HETEROEPITAXIAL PROBLEMS IN HEAVILY CARBON-DOPED GAAS GROWN ON GAAS SUBSTRATES BY MOMBE

被引：0
|
作者：
NOZAKI, S [1 ]
MIYAKE, R [1 ]
AKATSUKA, T [1 ]
YAMADA, T [1 ]
FUKAMACHI, T [1 ]
SAITO, K [1 ]
KONAGAI, M [1 ]
TAKAHASHI, K [1 ]
机构：
[1] TOKYO INST TECHNOL,DEPT ELECT & ELECTR ENGN,MEGURO KU,TOKYO 152,JAPAN
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 07期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：30 / 30
页数：1
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