Heavily carbon-doped GaAs grown on various oriented GaAs substrates by MOMBE

被引：3
|
作者：
Hatatani, S [1 ]
Guo, LQ [1 ]
Oh, JH [1 ]
Grahn, HT [1 ]
Konagai, M [1 ]
机构：
[1] TOKYO INST TECHNOL, RES CTR QUANTUM EFFECTS ELECT, MEGURO KU, TOKYO 152, JAPAN
来源：
JOURNAL OF CRYSTAL GROWTH | 1997年 / 170卷 / 1-4期
关键词：
D O I：
10.1016/S0022-0248(96)00584-2
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Heavily carbon-doped GaAs epitaxial layers have been grown simultaneously on (100), (111)A, (111)B, (411)A, (411)B and (711)A semi-insulating (SI) GaAs substrates by metalorganic molecular beam epitaxy (MOMBE) using trimethylgallium (TMG) and elemental As (As-4). The hole concentration and surface flatness strongly depend on the substrate orientation. The highest carbon incorporation was observed for the layers grown on a (411)A substrate with a hole concentration of 1.0 x 10(21) cm(-3) and a lattice mismatch of Delta d/d = -0.48%. Atomic force microscope (AFM) images reveal that the epilayers grown on (411)A substrates exhibit extremely flat surfaces, although these layers contain the highest carbon concentration.
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页码：297 / 300
页数：4
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