NEW FABRICATION PROCESS FOR SMALL JUNCTIONS USING A SELECTIVE ETCH-BACK TECHNIQUE

被引：1
|
作者：
KODAIRA, S [1 ]
SHOJI, A [1 ]
KOHJIRO, S [1 ]
KIRYU, S [1 ]
机构：
[1] ELECTROTECH LAB, TSUKUBA, IBARAKI 305, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 9A期
关键词：
SIS; SMALL JUNCTION; SUBMILLIMETER WAVE; MIXER; FABRICATION PROCESS; REACTIVE ION ETCHING; SELECTIVE ETCH-BACK;
D O I：
10.1143/JJAP.34.L1127
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A new process for fabricating small junctions from a full-wafer junction sandwich has been developed, in which a dry-etching technique is used for selectively etching an SiO2 insulating layer deposited on a junction. Using this new process and a de ep-uv photolithography technology, we fabricated NbCxN1-x/MgO/NbCxN1-x junctions with dimensions of 0.8x1.1 mu m(2).
引用
收藏
页码：L1127 / L1129
页数：3
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