NEW FABRICATION PROCESS FOR SMALL JUNCTIONS USING A SELECTIVE ETCH-BACK TECHNIQUE

被引：1

作者：

KODAIRA, S ^{[1
]}

SHOJI, A ^{[1
]}

KOHJIRO, S ^{[1
]}

KIRYU, S ^{[1
]}

机构：

[1] ELECTROTECH LAB, TSUKUBA, IBARAKI 305, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 9A期

关键词：

SIS; SMALL JUNCTION; SUBMILLIMETER WAVE; MIXER; FABRICATION PROCESS; REACTIVE ION ETCHING; SELECTIVE ETCH-BACK;

D O I：

10.1143/JJAP.34.L1127

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new process for fabricating small junctions from a full-wafer junction sandwich has been developed, in which a dry-etching technique is used for selectively etching an SiO2 insulating layer deposited on a junction. Using this new process and a de ep-uv photolithography technology, we fabricated NbCxN1-x/MgO/NbCxN1-x junctions with dimensions of 0.8x1.1 mu m(2).

引用

页码：L1127 / L1129

页数：3

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