CALCULATION OF POTENTIAL DISTRIBUTION AT SURFACE OF AN INTRINSIC SEMICONDUCTOR

被引：1

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作者：

MCQUISTAN, RB

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来源：

JOURNAL OF APPLIED PHYSICS | 1963年 / 34卷 / 12期

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D O I：

10.1063/1.1729271

中图分类号：

O59 [应用物理学];

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页码：3236 / &

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