CALCULATION OF POTENTIAL DISTRIBUTION AT SURFACE OF AN INTRINSIC SEMICONDUCTOR

被引：1
|
作者：
MCQUISTAN, RB
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1963年 / 34卷 / 12期
关键词：
D O I：
10.1063/1.1729271
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：3236 / &
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