LUMINESCENCE OF DEFORMED P-TYPE GAAS

被引：5
|
作者：
TUCK, B [1 ]
STURT, RM [1 ]
机构：
[1] UNIV NOTTINGHAM,DEPT ELECT & ELECTR ENGN,NOTTINGHAM,ENGLAND
来源：
JOURNAL OF MATERIALS SCIENCE | 1973年 / 8卷 / 02期
关键词：
D O I：
10.1007/BF00550682
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：295 / 297
页数：3
相关论文
共 50 条
  • [41] Light scattering in p-type GaAs:Ge
    MunozHernandez, RA
    JimenezSandoval, S
    TorresDelgado, G
    Roch, C
    Chen, XK
    Irwin, JC
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (04) : 2388 - 2395
  • [42] DIFFUSION OF MANGANESE IN EXTRINSIC P-TYPE GAAS
    SKORYATINA, EA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (10): : 1177 - 1178
  • [43] DIFFUSION LENGTHS IN P-TYPE MOCVD GAAS
    WIGHT, DR
    OLIVER, PE
    PRENTICE, T
    STEWARD, VW
    JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 183 - 191
  • [44] INFRARED PLASMA REFLECTION IN P-TYPE GAAS
    SOBOTTA, H
    NEUMANN, H
    MULLER, A
    RIEDE, V
    SOLID-STATE ELECTRONICS, 1978, 21 (04) : 699 - 700
  • [45] Surface recombination velocity in p-type GaAs
    Ito, Hiroshi, 1600, Publ by JJAP, Minato-ku, Japan (33):
  • [46] DISLOCATION CONFIGURATIONS IN SEMI-INSULATING, N-TYPE AND P-TYPE GAAS DEFORMED AT 150-DEGREES-C
    DECOOMAN, BC
    CARTER, CB
    PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1989, 60 (02): : 245 - 266
  • [47] Luminescence imaging of photoelectron spin precession during drift in a p-type GaAs microfabricated Hall bar
    Notot, V.
    Paget, D.
    Rowe, A. C. H.
    Martinelli, L.
    Cadiz, F.
    Arscott, S.
    JOURNAL OF APPLIED PHYSICS, 2017, 121 (12)
  • [48] PHOTO-LUMINESCENCE EXCITATION OF THE 1.441-EV CATION ANTISITE EMISSION IN P-TYPE GAAS
    YU, PW
    PHYSICAL REVIEW B, 1983, 27 (12): : 7779 - 7781
  • [49] MAGNETIC FREEZEOUT OF HOLES IN UNIAXIALLY DEFORMED P-TYPE INSB
    GERMANENKO, AV
    MINKOV, GM
    RUMYANTSEV, EL
    RUT, OE
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (07): : 734 - 737
  • [50] PHOTOLUMINESCENCE OF EPITAXIAL N-TYPE GAAS PREPARED FROM P-TYPE GAAS
    GORELENOK, AT
    NASLEDOV, DN
    NEGRESKU.V
    TSARENKO.BV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (05): : 551 - +
12345