INFRARED PLASMA REFLECTION IN P-TYPE GAAS

被引：4

作者：

SOBOTTA, H

NEUMANN, H

MULLER, A

RIEDE, V

机构：

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 04期

关键词：

D O I：

10.1016/0038-1101(78)90340-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：699 / 700

页数：2

共 50 条

[1] INFRARED-PLASMA-REFLECTION IN P-TYPE GAAS
RHEINLANDER, B
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1973, 55 (01): : K69 - K74
[2] INFRARED-ABSORPTION AND PLASMA REFLECTION OF P-TYPE SEMICONDUCTORS
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (02): : 169 - 172
[3] INFRARED REFLECTION DUE TO PLASMON-PHONON INTERACTION IN P-TYPE GAAS
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[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 68 (01): : K91 - K94
[4] PLASMA REFLECTION IN P-TYPE HGTE
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[5] INVESTIGATION OF INFRARED REFLECTION FROM P-TYPE PBTE
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (11): : 1461 - 1462
[6] CALCULATION OF INFRARED PLASMA REFLECTION SPECTRA OF INHOMOGENEOUSLY DOPED P-TYPE GALLIUM-ARSENIDE
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[J]. CHINESE PHYSICS, 1982, 2 (01): : 236 - 245
[7] INFRARED REFLECTION OF HEAVILY DOPED P-TYPE GALLIUM ARSENIDE
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[J]. CANADIAN JOURNAL OF PHYSICS, 1966, 44 (07) : 1665 - &
[8] PLASMA REFLECTION OF GAAS IN FAR INFRARED
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[J]. ANNALEN DER PHYSIK, 1970, 25 (04) : 411 - &
[9] ERRATUM - INFRARED REFLECTION OF HEAVILY DOPED P-TYPE GALLIUM ARSENIDE
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[10] CATHODOLUMINESCENCE OF P-TYPE GAAS
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