INFRARED-PLASMA-REFLECTION IN P-TYPE GAAS

被引：6

作者：

RHEINLANDER, B ^{[1
]}

机构：

[1] KARL MARX UNIV, SEKT PHYS, LEIPZIG 701, EAST GERMANY

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1973年 / 55卷 / 01期

关键词：

D O I：

10.1002/pssb.2220550168

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：K69 / K74

页数：6

共 50 条

[1] INFRARED PLASMA REFLECTION IN P-TYPE GAAS
SOBOTTA, H
NEUMANN, H
MULLER, A
RIEDE, V
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (04) : 699 - 700
[2] INFRARED-ABSORPTION AND PLASMA REFLECTION OF P-TYPE SEMICONDUCTORS
REBANE, YT
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (02): : 169 - 172
[3] INFRARED REFLECTION DUE TO PLASMON-PHONON INTERACTION IN P-TYPE GAAS
RHEINLANDER, B
SOBOTTA, H
RIEDE, V
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 68 (01): : K91 - K94
[4] PLASMA REFLECTION IN P-TYPE HGTE
IVANOVOMSKII, VI
KOLOMIET.BT
MARKOV, YF
MEKHTIEV, AS
SMEKALOV.KP
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (09): : 1203 - +
[5] INVESTIGATION OF INFRARED REFLECTION FROM P-TYPE PBTE
VEIS, AN
VINOGRADOVA, MN
IVANCHUKOVA, NL
UKHANOV, YI
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (11): : 1461 - 1462
[6] CALCULATION OF INFRARED PLASMA REFLECTION SPECTRA OF INHOMOGENEOUSLY DOPED P-TYPE GALLIUM-ARSENIDE
CHEN, WX
LI, GH
NIU, JZ
GUO, CZ
[J]. CHINESE PHYSICS, 1982, 2 (01): : 236 - 245
[7] INFRARED REFLECTION OF HEAVILY DOPED P-TYPE GALLIUM ARSENIDE
RICCIUS, HD
BERTIE, JE
[J]. CANADIAN JOURNAL OF PHYSICS, 1966, 44 (07) : 1665 - &
[8] PLASMA REFLECTION OF GAAS IN FAR INFRARED
SOBOTTA, H
[J]. ANNALEN DER PHYSIK, 1970, 25 (04) : 411 - &
[9] ERRATUM - INFRARED REFLECTION OF HEAVILY DOPED P-TYPE GALLIUM ARSENIDE
RUCCUIS, HD
BERTIE, JE
[J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (09) : 3188 - &
[10] CATHODOLUMINESCENCE OF P-TYPE GAAS
PANKOVE, JI
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, S 21 : 298 - &

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