HIGH-PERFORMANCE N-CHANNEL MOS LSI USING DEPLETION-TYPE LOAD ELEMENTS

被引：22
|
作者：
MASUHARA, T
NAGATA, M
HASHIMOTO, N
机构：
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1972年 / SC 7卷 / 03期
关键词：
D O I：
10.1109/JSSC.1972.1050281
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：224 / +
页数：1
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