HIGH-PERFORMANCE N-CHANNEL MOS LSI USING DEPLETION-TYPE LOAD ELEMENTS

被引：22
|
作者：
MASUHARA, T
NAGATA, M
HASHIMOTO, N
机构：
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1972年 / SC 7卷 / 03期
关键词：
D O I：
10.1109/JSSC.1972.1050281
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：224 / +
页数：1
相关论文
共 50 条
  • [31] Enhanced Ge n-channel gate stack performance using HfAlO high-k dielectric
    Kothari, Shraddha
    Joishi, Chandan
    Biswas, Dipankar
    Vaidya, Dhirendra
    Ganguly, Swaroop
    Lodha, Saurabh
    2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2015, : 285 - U282
  • [32] LSI - KEY TO A HIGH-PERFORMANCE DTMF RECEIVER USING STANDARD FILTERS
    BRADLEY, B
    ELECTRONIC DESIGN, 1979, 27 (08) : 138 - 143
  • [33] HIGH-PERFORMANCE SUBMICROMETER CHANNEL MOS-FETS FOR ANALOG APPLICATIONS
    HUNG, MY
    ANTONIADIS, DA
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) : 2430 - 2431
  • [34] High-performance n-channel field effect transistors based on solution-processed dicyanomethylene-substituted tetrathienoquinoid
    Wu, Qinghe
    Qiao, Xiaolan
    Huang, Qiuliu
    Li, Jie
    Xiong, Yu
    Gao, Xike
    Li, Hongxiang
    RSC ADVANCES, 2014, 4 (33): : 16939 - 16943
  • [35] HFinFET: A Scalable, High Performance, Low Leakage Hybrid n-Channel FET
    Majumdar, Kausik
    Majhi, Prashant
    Bhat, Navakanta
    Jammy, Raj
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2010, 9 (03) : 342 - 344
  • [36] Op-Amps without current mirrors based on depletion-mode p- and n-channel MOS and JFET
    Nikolay Prokopenko
    Petr Budyakov
    Anna Bugakova
    Alexey Titov
    Analog Integrated Circuits and Signal Processing, 2022, 113 : 119 - 127
  • [37] A high-performance infrared detector using MOS technology
    Srinivas, TAS
    Timans, PJ
    Ahmed, H
    SENSORS AND MATERIALS, 1996, 8 (06) : 317 - 326
  • [38] High-performance n-channel organic thin-film transistors based on the dual effects of heterojunction and surface modification
    曹进
    洪飞
    邢菲菲
    顾文
    郭新安
    张浩
    魏斌
    张建华
    王军
    ChinesePhysicsB, 2010, 19 (03) : 460 - 465
  • [39] Op-Amps without current mirrors based on depletion-mode p- and n-channel MOS and JFET
    Prokopenko, Nikolay
    Budyakov, Petr
    Bugakova, Anna
    Titov, Alexey
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2022, 113 (01) : 119 - 127
  • [40] High-performance n-channel organic thin-film transistors based on the dual effects of heterojunction and surface modification
    Cao Jin
    Hong Fei
    Xing Fei-Fei
    Gu Wen
    Guo Xin-An
    Zhang Hao
    Wei Bin
    Zhang Jian-Hua
    Wang Jun
    CHINESE PHYSICS B, 2010, 19 (03)
12345