HIGH-QUALITY THIN EPITAXIAL GAAS LAYERS USING TMG AND ARSINE

被引：0
|
作者：
BHAT, R
GHANDHI, SK
机构：
[1] GE,DEPT SEMICOND PROD,SYRACUSE,NY 13201
[2] REPATRIAT GEN HOSP,CONCORD 2139,NEW S WALES,AUSTRALIA
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C318 / C318
页数：1
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