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HIGH-FREQUENCY LOW CURRENT GAALAS-GAAS BIPOLAR-TRANSISTOR
被引:0
|
作者
:
ANKRI, D
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
ANKRI, D
[
1
]
SCAVENNEC, A
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
SCAVENNEC, A
[
1
]
BESOMBES, C
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
BESOMBES, C
[
1
]
COURBET, C
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
COURBET, C
[
1
]
HELIOT, F
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
HELIOT, F
[
1
]
RIOU, J
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
RIOU, J
[
1
]
机构
:
[1]
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1981年
/ 28卷
/ 10期
关键词
:
D O I
:
10.1109/T-ED.1981.20574
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1247 / 1247
页数:1
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