HIGH-FREQUENCY LOW CURRENT GAALAS-GAAS BIPOLAR-TRANSISTOR

被引：0
|
作者：
ANKRI, D [1 ]
SCAVENNEC, A [1 ]
BESOMBES, C [1 ]
COURBET, C [1 ]
HELIOT, F [1 ]
RIOU, J [1 ]
机构：
[1] CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 10期
关键词：
D O I：
10.1109/T-ED.1981.20574
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1247 / 1247
页数：1
相关论文
共 50 条
  • [31] GAAS-SI HETEROJUNCTION BIPOLAR-TRANSISTOR
    CHEN, J
    WON, T
    UNLU, MS
    MORKOC, H
    VERRET, D
    APPLIED PHYSICS LETTERS, 1988, 52 (10) : 822 - 824
  • [32] A PNP ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR
    CHAND, N
    HENDERSON, T
    FISCHER, R
    KOPP, W
    MORKOC, H
    GIACOLETTO, LJ
    APPLIED PHYSICS LETTERS, 1985, 46 (03) : 302 - 304
  • [33] ORIGIN OF HIGH OFFSET VOLTAGE IN AN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR
    LEE, SC
    KAU, JN
    LIN, HH
    APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1114 - 1116
  • [34] A NEW STRUCTURE GAALAS-GAAS DEVICE UNITING LED AND PHOTO-TRANSISTOR
    TAKEUCHI, M
    SATOH, F
    YAMASHITA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (12): : 1785 - 1785
  • [35] STRAINED-LAYER HOMOJUNCTION GAAS BIPOLAR-TRANSISTOR WITH ENHANCED CURRENT GAIN
    SCHUMMERS, R
    NAROZNY, P
    BENEKING, H
    ELECTRONICS LETTERS, 1986, 22 (17) : 924 - 925
  • [36] DETERMINATION OF THE TRANSITION FREQUENCY OF A BIPOLAR-TRANSISTOR USING OPTOELECTRONIC CURRENT SOURCES
    DZIADOWIEC, A
    LESCURE, M
    BOUCHER, J
    IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1989, 38 (01) : 98 - 102
  • [37] GAAS INVERSION-BASE BIPOLAR-TRANSISTOR (GAAS IBT)
    MATSUMOTO, K
    HAYASHI, Y
    HASHIZUME, N
    YAO, T
    KATO, M
    MIYASHITA, T
    FUKUHARA, N
    HIRASHIMA, H
    KINOSADA, T
    IEEE ELECTRON DEVICE LETTERS, 1986, 7 (11) : 627 - 628
  • [38] GAAS INVERSION-BASE BIPOLAR-TRANSISTOR (GAAS IBT)
    MATSUMOTO, K
    HAYASHI, Y
    HASHIZUME, N
    YAO, T
    KATO, M
    MIYASHITA, T
    FUKUHARA, N
    KINOSADA, T
    HIRASHIMA, H
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1845 - 1845
  • [39] CURRENT TRANSPORT MECHANISM AT THE EMITTER-BASE JUNCTION OF AN N-P-N GAAS GAALAS HETEROJUNCTION BIPOLAR-TRANSISTOR PREPARED BY MBE
    REZAZADEH, AA
    MORGAN, DV
    MAWBY, PA
    KERR, TM
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (04) : 947 - 949
  • [40] HIGH-SPEED GAALAS-GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH NEAR-BALLISTIC OPERATION
    ANKRI, D
    SCHAFF, WJ
    SMITH, P
    EASTMAN, LF
    ELECTRONICS LETTERS, 1983, 19 (04) : 147 - 149
12345