DEFECTS IN LOW-TEMPERATURE-GROWN GAAS ANNEALED AT 800-DEGREES-C

被引：25
|
作者：
OHBU, I
TAKAHAMA, M
HIRUMA, K
机构：
[1] Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185
来源：
APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 14期
关键词：
D O I：
10.1063/1.108449
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaAs grown by molecular beam epitaxy (MBE) at 300-degrees-C is annealed at 800-degrees-C and optical properties are studied using photoluminescence spectroscopy (PL) and infrared-absorption spectroscopy. Three kinds of defects are observed. One of them is attributed to gallium vacancies with an energy level at 0.3 eV above the valence-band edge. The concentration of gallium vacancies is increased by the high-temperature annealing. The GaAs can render inactive free electrons of 1.3 X 10(18) CM-3 even after annealing at 800-degrees-C for 10 min.
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页码：1679 / 1681
页数：3
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