SURFACE-MORPHOLOGY OF METALORGANIC VAPOR-PHASE EPITAXY-GROWN INP OBSERVED BY ATOMIC-FORCE MICROSCOPY

被引：2

作者：

HSU, CC

WONG, TKS

WILSON, IH

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 133卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(93)90120-L

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Steps of monolayer height (0.29 nm) were observed by atomic force microscopy (AFM) after growth of a 600 nm thick epitaxial layer of InP by metalorganic vapour phase epitaxy on a vicinal InP substrate. The mean terrace width of 240 nm was found to be similar to that on a vicinal InP substrate annealed at the growth temperature. The growth mode was consistent with the Burton-Cabrera-Frank (BCF) theory and the steps were ''morphologically stable'' during growth.

引用

页码：185 / 188

页数：4

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