SURFACE-TOPOGRAPHY AND STEP ORIENTATION DURING METALORGANIC VAPOR-PHASE EPITAXY OF INP

被引：17
|
作者：
EPLER, JE
SCHWEIZER, HP
PEDERSEN, J
SOCHTIG, J
机构：
[1] Paul Scherrer Institute Zurich, CH-8048 Zurich
来源：
APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 12期
关键词：
D O I：
10.1063/1.113658
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The surface topography during initial and steady state epitaxial growth of InP on InP is monitored with in situ diffuse elastic light scattering. The in situ results are compared with the end-of-run topography measured by ex situ atomic force microscopy. Upon growth initiation, an increase in surface roughness is observed with steps oriented perpendicular to the [011] and [010] direction. After several nanometers of InP deposition, the surface topography planarizes and steady state step-flow epitaxy develops with steps aligned to the pregrowth terrace.© 1995 American Institute of Physics.
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页码：1472 / 1474
页数：3
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