INFLUENCE OF DISORDER ON THE ELECTRONIC-PROPERTIES OF THE SI(111) SURFACE

被引：1

|

作者：

RODRIGUES, DE

WEISZ, JF

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.35.5744

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：5744 / 5748

页数：5

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