INFLUENCE OF DISORDER ON THE ELECTRONIC-PROPERTIES OF THE SI(111) SURFACE

被引：1
|
作者：
RODRIGUES, DE
WEISZ, JF
机构：
来源：
PHYSICAL REVIEW B | 1987年 / 35卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.35.5744
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：5744 / 5748
页数：5
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