FABRICATION AND PROPERTIES OF NB/AL, ALOX/NB JOSEPHSON TUNNEL-JUNCTIONS WITH A DOUBLE-OXIDE BARRIER

被引：24
|
作者：
HOUWMAN, EP
VELDHUIS, D
FLOKSTRA, J
ROGALLA, H
机构：
[1] University of Twente, Faculty of Applied Physics, 7500 AE Enschede
来源：
JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 04期
关键词：
D O I：
10.1063/1.345579
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High-quality Nb/Al, Alox/Nb Josephson tunnel junctions using double-oxide layers as barriers have been fabricated. The critical current density is controlled by the thickness of the second Al layer. This layer has to be oxidized completely through in order to obtain high-quality junctions. Typically, gap voltages of 2.8-3.0 mV and Vm up to 70 mV at 4.2 K were obtained.
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页码：1992 / 1994
页数：3
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