XPS MEASUREMENTS OF ABRUPT GE-GAAS HETEROJUNCTION INTERFACES

被引：45

作者：

GRANT, RW

WALDROP, JR

KRAUT, EA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 04期

关键词：

D O I：

10.1116/1.569806

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1451 / 1455

页数：5

共 50 条

[21] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS
ANDERSON, RL
SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &
[22] ELECTRONIC-STRUCTURE OF (110) GE-GAAS SUPER-LATTICES AND INTERFACES
HERMAN, F
KASOWSKI, RV
PHYSICAL REVIEW B, 1978, 17 (02): : 672 - 674
[23] ELECTRONIC-STRUCTURE OF THE GE-ZNSE, GE-GAAS, AND GE-ALAS(110) INTERFACES AND SUPERLATTICES
KUMAR, A
SINGH, I
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1988, 148 (02): : 549 - 558
[24] PHOTOEMISSION-STUDIES OF HETEROJUNCTION INTERFACE FORMATION - GE-GAAS(110) AND GE-SI(111)
MARGARITONDO, G
STOFFEL, NG
KATNANI, AD
EDELMAN, HS
BERTONI, CM
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03): : 784 - 786
[25] ELECTRONIC-PROPERTIES OF RECONSTRUCTED GE-GAAS SUPER-LATTICES AND INTERFACES
KUNC, K
MARTIN, RM
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 304 - 304
[26] GE-GAAS(110) INTERFACE FORMATION
BAUER, RS
MCMENAMIN, JC
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1444 - 1449
[27] RECOMBINATION PROPERTIES OF INTERFACES AND ELECTRICAL CHARACTERISTICS OF GE-GAAS AND SIXGE1-X-GAAS HETEROJUNCTIONS
BORKOVSKAYA, OY
DMITRUK, NL
KONAKOVA, RV
SOLDATENKO, NN
TKHORIK, YA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (08): : 879 - 883
[28] ELECTRICAL PROPERTIES OF GE-GAAS HETEROJUNCTIONS
ALADINSK.VK
MASLOV, AA
SOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (11): : 2789 - +
[29] NEW METHOD FOR THE ELECTRONIC-STRUCTURE OF HETEROJUNCTIONS - APPLICATION TO THE (100) GE-GAAS INTERFACES
POLLMANN, J
PANTELIDES, ST
SOLID STATE COMMUNICATIONS, 1979, 30 (10) : 621 - 625
[30] SLIP IN EPITAXIAL GE-GAAS COMBINATIONS
HOLLOWAY, H
BOBB, LC
JOURNAL OF APPLIED PHYSICS, 1968, 39 (05) : 2467 - &

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