PHOTOELECTRIC PROPERTIES OF N-CDS-IN-P-CUINSE2 HETEROJUNCTIONS

被引：0
|
作者：
MAGOMEDOV, MA
RUL, YV
机构：
来源：
SEMICONDUCTORS | 1993年 / 27卷 / 02期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Heterojunctions were formed between a thermally evaporated n-type CdS film and the surface of a polycrystalline p-type CuInSe2 plate. Photoelectric properties of these heterojunctions were investigated. The current-voltage and spectral characteristics of heterojunctions with a current responsivity almost-equal-to 60 mA/W were analyzed in the photon energy range between the band gaps of the two semiconductors in contact. A photosensitivity maximum of such heterojunctions was observed at temperatures 150-180 K.
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页码：137 / 139
页数：3
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