HIGH-TRANSCONDUCTANCE INGAAS/INALAS SISFETS

被引：0
|
作者：
JACKSON, TN [1 ]
SOLOMON, PM [1 ]
TISCHLER, MA [1 ]
PETTIT, GD [1 ]
CANORA, FJ [1 ]
DEGELORMO, JF [1 ]
BUCCHIGNANO, JJ [1 ]
WIND, SJ [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 12期
关键词：
D O I：
10.1109/16.158725
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
[No abstract available]
引用
收藏
页码：2703 / 2704
页数：2
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