High breakdown voltage and high fmax InAlAs/InGaAs HEMTs on GaAs

被引：3

作者：

Higuchi, K ^{[1
]}

Matsumoto, H ^{[1
]}

Mishima, T ^{[1
]}

Nakamura, T ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan

来源：

1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICIPRM.1998.712569

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple model to describe the dependence of both the breakdown voltage between a gate and a drain (BYgd) and maximum frequency of oscillation (f(max)) on a width of the gate recess in an InAlAs/InGaAs high electron mobility transistor (HEMT) is presented. The model suggests that the wide recess structure can improve both BVgd and f(max), which is experimentally confirmed. We fabricated InAlAs/InGaAs HEMTs lattice-mismatched on GaAs substrates with optimum recess-width, and these exhibited both a high BVgd of 14 V and a high f(max) of 127 GHz at a gate length of 0.66 mu m.

引用

页码：501 / 504

页数：4

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