PLASMA-ASSISTED DEPOSITION OF DIELECTRIC FILMS

被引：0

|

作者：

ADAMS, AC ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：C312 / C312

页数：1

相关论文

共 50 条

[1] PLASMA-ASSISTED DEPOSITION OF DIELECTRIC FILMS
ADAMS, AC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : C354 - C354
[2] Plasma-assisted deposition of nanostructured films and coatings
Girshick, SL
[J]. PROGRESS IN PLASMA PROCESSING OF MATERIALS 1999, 1999, : 607 - 612
[3] PLASMA-ASSISTED DEPOSITION AND EPITAXY OF GAAS FILMS
HARIU, T
TAKENAKA, K
SHIBUYA, S
KOMATSU, Y
SHIBATA, Y
[J]. THIN SOLID FILMS, 1981, 80 (1-3) : 235 - 239
[4] PLASMA-ASSISTED DEPOSITION OF NANOSTRUCTURED FILMS AND COATINGS
Girshick, Steven L.
[J]. HIGH TEMPERATURE MATERIAL PROCESSES, 2011, 15 (04): : 293 - 298
[5] Plasma-assisted deposition of nanostructured films and coatings
Girshick, SL
[J]. HIGH TEMPERATURE MATERIAL PROCESSES, 2000, 4 (03): : 379 - 384
[6] Plasma-assisted chemical vapor deposition of dielectric thin films for ULSI semiconductor circuits
Cote, DR
Nguyen, SV
Stamper, AK
Armbrust, DS
Többen, D
Conti, RA
Lee, GY
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1999, 43 (1-2) : 5 - 38
[7] Dielectric constant of boron nitride films synthesized by plasma-assisted chemical vapor deposition
[J]. Sugino, Takashi, 1600, (JJAP, Tokyo):
[8] Dielectric constant of boron nitride films synthesized by plasma-assisted chemical vapor deposition
Sugino, T
Tai, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (11A): : L1101 - L1104
[9] GAN FILMS PREPARED BY ECR PLASMA-ASSISTED DEPOSITION
ZHANG, S
BRODIE, DE
[J]. THIN SOLID FILMS, 1994, 237 (1-2) : 124 - 128
[10] PLASMA-ASSISTED DEPOSITION OF GAAS THIN-FILMS
TAKENAKA, K
HARIU, T
SHIBATA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 183 - 186

← 1 2 3 4 5 →