HIGH-FIELD TRANSPORT OF HOLES IN SILICON

被引：14

作者：

SMITH, PM ^{[1
]}

FREY, J ^{[1
]}

CHATTERJEE, P ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 04期

关键词：

D O I：

10.1063/1.92711

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：332 / 333

页数：2

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