HIGH-FIELD TRANSPORT OF HOLES IN SILICON

被引：14
|
作者：
SMITH, PM [1 ]
FREY, J [1 ]
CHATTERJEE, P [1 ]
机构：
[1] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265
来源：
APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 04期
关键词：
D O I：
10.1063/1.92711
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：332 / 333
页数：2
相关论文
共 50 条
  • [21] Unified bulk mobility model for low- and high-field transport in silicon
    Schenk, A
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (02) : 814 - 831
  • [22] THEORY OF HIGH-FIELD ELECTRON-TRANSPORT AND IMPACT IONIZATION IN SILICON DIOXIDE
    ARNOLD, D
    CARTIER, E
    DIMARIA, DJ
    [J]. PHYSICAL REVIEW B, 1994, 49 (15): : 10278 - 10297
  • [23] Current transport and high-field reliability of aluminum/hafnium oxide/silicon structure
    Sen, B
    Wong, H
    Filip, V
    Choi, HY
    Sarkar, CK
    Chan, M
    Kok, CW
    Poon, MC
    [J]. THIN SOLID FILMS, 2006, 504 (1-2) : 312 - 316
  • [24] HIGH-FIELD DIFFUSION OF ELECTRONS IN SILICON
    CANALI, C
    JACOBONI, C
    OTTAVIANI, G
    ALBERIGIQUARANTA, A
    [J]. APPLIED PHYSICS LETTERS, 1975, 27 (05) : 278 - 280
  • [25] HIGH-FIELD TRANSPORT PROPERTIES OF CDTE
    RUCH, JG
    [J]. APPLIED PHYSICS LETTERS, 1972, 20 (07) : 253 - &
  • [26] Ultrafast high-field transport in semiconductors
    Bell Laboratories, Lucent Technol., 101 Crawfords C., Holmdel, NJ 07733, United States
    不详
    [J]. Phys B Condens Matter, 1 (348-352):
  • [27] THEORY OF HIGH-FIELD HOPPING TRANSPORT
    BOTTGER, H
    WEGENER, D
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 547 - 554
  • [28] High-field transport studies of GaN
    Barker, JM
    Akis, R
    Ferry, DK
    Goodnick, SM
    Thornton, TJ
    Koleske, DD
    Wickenden, AE
    Henry, RL
    [J]. PHYSICA B-CONDENSED MATTER, 2002, 314 (1-4) : 39 - 41
  • [29] Ultrafast high-field transport in semiconductors
    Leitenstorfer, A
    Hunsche, S
    Shah, J
    Nuss, MC
    Knox, WH
    [J]. PHYSICA B, 1999, 272 (1-4): : 348 - 352
  • [30] High-field transport in model materials
    Bringuier, E
    [J]. PHYSICAL REVIEW B, 1996, 54 (03): : 1799 - 1807
12345