NEW DESIGN TECHNOLOGY FOR EEPROM MEMORY CELLS WITH 10 MILLION WRITE ERASE CYCLING ENDURANCE

被引：0
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作者：
ENDOH, T
SHIROTA, R
TANAKA, Y
NAKAYAMA, R
KIRISAWA, R
ARITOME, S
MASUOKA, F
机构：
来源：
1989 INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST | 1989年
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：599 / 602
页数：4
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