NEW DESIGN TECHNOLOGY FOR EEPROM MEMORY CELLS WITH 10 MILLION WRITE ERASE CYCLING ENDURANCE

被引：0
|
作者：
ENDOH, T
SHIROTA, R
TANAKA, Y
NAKAYAMA, R
KIRISAWA, R
ARITOME, S
MASUOKA, F
机构：
来源：
1989 INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST | 1989年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：599 / 602
页数：4
相关论文
共 48 条
  • [1] New write/erase operation technology for flash EEPROM cells to improve the read disturb characteristics
    Endoh, T
    Iizuka, H
    Shirota, R
    Masuoka, F
    [J]. IEICE TRANSACTIONS ON ELECTRONICS, 1997, E80C (10) : 1317 - 1323
  • [2] DESIGN, SELECTION AND IMPLEMENTATION OF FLASH ERASE EEPROM MEMORY CELLS
    AMIN, AAM
    [J]. IEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMS, 1992, 139 (03): : 370 - 376
  • [3] Write/erase cycling endurance of memory cells with SiO2/HfO2 tunnel dielectric
    Blomme, P
    Van Houdt, J
    De Meyer, K
    [J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2004, 4 (03) : 345 - 352
  • [4] DATA RETENTION CHARACTERISTICS OF FLASH MEMORY CELLS AFTER WRITE AND ERASE CYCLING
    ARITOME, S
    SHIROTA, R
    SAKUI, K
    MASUOKA, F
    [J]. IEICE TRANSACTIONS ON ELECTRONICS, 1994, E77C (08) : 1287 - 1295
  • [5] A Study on the Failure Mechanism of a Phase-Change Memory in Write/Erase Cycling
    Lee, Suyoun
    Jeong, Jeung-hyun
    Lee, Taek Sung
    Kim, Won Mok
    Cheong, Byung-ki
    [J]. IEEE ELECTRON DEVICE LETTERS, 2009, 30 (05) : 448 - 450
  • [6] MEASUREMENT OF EFFECT OF WRITE-ERASE CYCLING ON NOISE IN MNOS MEMORY TRANSISTORS
    GENTIL, P
    CHAUSSE, S
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) : 1042 - 1049
  • [7] Improvement of write/erase cycling of memory cells with SiO2/HfO2tunnel dielectric
    Blomme, P
    Govoreanu, B
    Van Houdt, J
    De Meyer, K
    [J]. 2003 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP - FINAL REPORT, 2003, : 95 - 98
  • [8] Write and Erase Threshold Voltage Interdependence in Resistive Switching Memory Cells
    Ghosh, Gargi
    Orlowski, Marius K.
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (09) : 2850 - 2856
  • [9] New design of sense amplifier for EEPROM memory
    Liu, Dong-sheng
    Zou, Xue-cheng
    Yu, Qiong
    Zhang, Fan
    [J]. JOURNAL OF ZHEJIANG UNIVERSITY-SCIENCE A, 2009, 10 (02): : 179 - 183
  • [10] New design of sense amplifier for EEPROM memory
    Dong-sheng Liu
    Xue-cheng Zou
    Qiong Yu
    Fan Zhang
    [J]. Journal of Zhejiang University-SCIENCE A, 2009, 10 : 179 - 183
12345