STUDIES ON FORMATION OF FESI2 FROM FESI-FE2SI5 EUTECTIC

被引：44
|
作者：
SAKATA, T [1 ]
NISHIDA, I [1 ]
SAKAI, Y [1 ]
FUJII, H [1 ]
YOSHINO, H [1 ]
机构：
[1] NATL RES INST MET,MEGURO KU,TOKYO,JAPAN
来源：
JOURNAL OF THE LESS-COMMON METALS | 1978年 / 61卷 / 02期
关键词：
D O I：
10.1016/0022-5088(78)90225-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：301 / 308
页数：8
相关论文
共 50 条
  • [31] Influence of Si growth temperature for embedding β+FeSi2 and resultant strain in β+FeSi2 on light emission from p-Si/β-FeSi2 particles/n-Si light-emitting diodes
    Suemasu, T
    Negishi, Y
    Takakura, K
    Hasegawa, F
    Chikyow, T
    APPLIED PHYSICS LETTERS, 2001, 79 (12) : 1804 - 1806
  • [32] AGGLOMERATION PROBLEMS IN THE FORMATION OF FESI2 FROM FE-SI THIN-FILM COUPLES
    SNELL, D
    IVEY, DG
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1993, 4 (01) : 47 - 54
  • [33] Formation process of β-FeSi2/Si heterostructure in high-dose Fe ion implanted Si
    Ishimaru, M
    Omae, K
    Bae, IT
    Naito, M
    Hirotsu, Y
    Valdez, JA
    Sickafus, KE
    JOURNAL OF APPLIED PHYSICS, 2006, 99 (11)
  • [34] Anisotropic etching of microscale β-FeSi2 particles: Formation, mechanism, and quantum confinement of β-FeSi2 nanowhiskers
    He, J. Y.
    Wang, X.
    Wu, X. L.
    Chu, Paul K.
    RSC ADVANCES, 2012, 2 (08): : 3254 - 3256
  • [35] Formation of ferromagnetic interface between β-FeSi2 and Si(111) substrate
    Hattori, Azusa N.
    Hattori, Ken
    Kodama, Kenji
    Hosoito, Nobuyoshi
    Daimon, Hiroshi
    APPLIED PHYSICS LETTERS, 2007, 91 (20)
  • [36] Eutectic α-Fe2Si5 and Ε-FeSi grown by the Czochralski method from arc melt
    Takigawa, Yasuo
    Tode, Mayumi
    Ohmukai, Masato
    Kurosawa, Kou
    Noguchi, Satoru
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (6 A): : 3851 - 3853
  • [37] Fabrication of β-FeSi2 Films on Si(111) Using Solid-Phase Growth Reaction from Fe and FeSi Sources
    Momiyama, Katsuaki
    Kanomata, Kensaku
    Kubota, Shigeru
    Hirose, Fumihiko
    IEICE TRANSACTIONS ON ELECTRONICS, 2013, E96C (05): : 690 - 693
  • [38] Eutectic α-Fe2Si5 and ε-FeSi grown by the Czochralski method from arc melt
    Takigawa, Y
    Tode, M
    Ohmukai, M
    Kurosawa, K
    Noguchi, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (6A): : 3851 - 3853
  • [39] Low-temperature deposition of high quality β-FeSi2 films by co-sputtering of Fe and Si for β-FeSi2/Si heterojunction solar cell
    Hou, Guofu
    Yu, Cao
    Liu, Fang
    Sun, Jian
    Geng, Xinhua
    Zhao, Ying
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4, 2010, 7 (3-4): : 1081 - 1084
  • [40] Photoluminescence and Photoreflectance Studies in Si/β-FeSi2/Si(001) Double Heterostructure
    Yoneda, K.
    Terai, Y.
    Noda, K.
    Miura, N.
    Fujiwara, Y.
    ASIA-PACIFIC CONFERENCE ON SEMICONDUCTING SILICIDES SCIENCE AND TECHNOLOGY TOWARDS SUSTAINABLE OPTOELECTRONICS (APAC-SILICIDE 2010), 2011, 11 : 185 - 188
12345