Eutectic α-Fe2Si5 and ε-FeSi grown by the Czochralski method from arc melt

被引：0

作者：

Takigawa, Y ^{[1
]}

Tode, M

Ohmukai, M

Kurosawa, K

Noguchi, S

机构：

[1] Osaka Electrocommun Univ, Dept Elect, Neyagawa, Osaka 5728530, Japan

[2] Akashi Coll Technol, Dept Elect Engn, Akashi, Hyogo 6748501, Japan

[3] Miyazaki Univ, Dept Elect Engn, Miyazaki 8892192, Japan

[4] Univ Osaka Prefecture, Grad Sch Engn, Dept Phys & Elect, Sakai, Osaka 5998531, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 6A期

关键词：

crystal morphology; eutectics; Czochralski method; growth from melt; alloys; semiconducting silicon compounds;

D O I：

10.1143/JJAP.41.3851

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown eutectic bulk crystals of alpha-Fe2Si5 and epsilon-FeSi by means of the Czochralski method from an arc melt with a tungsten rod. This method has the advantages of a one-step growth process and of the possible control of the crystal size. We obtained a crystal whose diameter was as large as 5 mm. Obtained crystals have a fibrous structure of epsilon-FeSi in an alpha-Fe2Si5 matrix. The epsilon-phase forms into fine rods of 1.2 mum width, which were densely distributed in the alpha-phase. The microstructure can be transformed in single-phase beta-FCSi2 upon thermal annealing, The X-ray diffraction pattern of the obtained beta-phase was also presented.

引用

页码：3851 / 3853

页数：3

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