EFFECTS OF SIASBEAS INTERFACE STRUCTURE ON THE INITIAL-STAGES OF GAAS MBE GROWTH ON SI(111)

被引：4
|
作者：
MAEHASHI, K
HASEGAWA, S
NAKASHIMA, H
机构：
[1] The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka, 567
来源：
JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(93)90585-K
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We propose a new interface structure of SiAsBeAs for eliminating the charge imbalance of GaAs on Si. We studied the effects of this chalcopyrite-type interface structure on the initial stages of GaAs MBE growth on Si (111) surfaces using RHEED and UPS measurements. It is found that GaAs growth proceeds in a layer-by-layer mode at the initial stages on this charge balanced surface.
引用
收藏
页码：98 / 101
页数：4
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