EFFECTS OF SIASBEAS INTERFACE STRUCTURE ON THE INITIAL-STAGES OF GAAS MBE GROWTH ON SI(111)

被引：4

作者：

MAEHASHI, K

HASEGAWA, S

NAKASHIMA, H

机构：

[1] The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka, 567

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90585-K

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We propose a new interface structure of SiAsBeAs for eliminating the charge imbalance of GaAs on Si. We studied the effects of this chalcopyrite-type interface structure on the initial stages of GaAs MBE growth on Si (111) surfaces using RHEED and UPS measurements. It is found that GaAs growth proceeds in a layer-by-layer mode at the initial stages on this charge balanced surface.

引用

页码：98 / 101

页数：4

共 50 条

[31] SI DOPING AND MBE GROWTH OF GAAS ON TILTED (111)A SUBSTRATES
SHIGETA, M
OKANO, Y
SETO, H
KATAHAMA, H
NISHINE, S
KOBAYASHI, K
FUJIMOTO, I
JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) : 284 - 287
[32] ACCOMMODATIONS AND INITIAL GROWTH-STAGES OF GAAS/GAP AND GAP/GAAS BY MBE
NOMURA, T
MIYAO, M
ISHIKAWA, K
SUZUKI, Y
HAGINO, M
APPLIED SURFACE SCIENCE, 1988, 33-4 : 1176 - 1182
[33] EFFECT OF SULFUR ON THE INITIAL-STAGES OF OXIDE-GROWTH ON NI(111)
LIU, J
BLAKELY, JM
APPLIED SURFACE SCIENCE, 1994, 74 (01) : 43 - 49
[34] A STUDY OF INITIAL-STAGES OF GROWTH GE LAYERS ON THE SURFACE (100) GAAS
PROTOPOPOV, OD
RUDENKO, AI
VANKOV, SA
KUZMIN, YA
SADOFIEV, YG
BELOUSOVA, TV
RADIOTEKHNIKA I ELEKTRONIKA, 1991, 36 (06): : 1182 - 1186
[35] INITIAL-STAGES OF AG GROWTH ON SB-TERMINATED GAAS(001)
MAEDA, F
WATANABE, Y
OSHIMA, M
JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 1164 - 1168
[36] INITIAL-STAGES OF OXIDATION OF GAAS(111)2X2-GA SURFACES
ALONSO, M
SORIA, F
SURFACE SCIENCE, 1987, 182 (03) : 530 - 544
[37] STRUCTURAL-CHANGES OCCURRING DURING THE INITIAL MBE GROWTH-STAGES OF GAAS/SI(100)
KOCH, SM
ROSNER, SJ
HULL, R
HARRIS, JS
JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (04) : A26 - A27
[38] INITIAL-STAGES OF ANODIC-OXIDATION OF GAAS
MAKKY, WH
CABRERA, F
GEIB, KM
WILMSEN, CW
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 417 - 421
[39] ANGLE-RESOLVED PHOTOEMISSION OF THE INITIAL-STAGES OF AU GROWTH ON SI(111) 7X7
HOUZAY, F
GUICHAR, GM
CROS, A
SALVAN, F
PINCHAUX, R
DERRIEN, J
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (34): : 7065 - 7072
[40] CHARACTERIZATION OF INITIAL-STAGES OF GROWTH OF CAF2 ON SI(111) SUBSTRATES BY ATOMIC-FORCE MICROSCOPY
OLIVIER, J
PADELETTI, G
MATHET, V
NGUYENVANDAU, F
BISARO, R
MICROSCOPY OF SEMICONDUCTING MATERIALS 1993, 1993, (134): : 613 - 616

← 1 2 3 4 5 →