ANDERSON TRANSITION IN SILICON INVERSION-LAYERS

被引：0

作者：

KONG, GL ^{[1
]}

LIAO, XB ^{[1
]}

YANG, XR ^{[1
]}

ZHANG, DL ^{[1
]}

LIN, SY ^{[1
]}

机构：

[1] ACAD SINICA,INST PHYS,BEIJING,PEOPLES R CHINA

来源：

CHINESE PHYSICS | 1981年 / 1卷 / 01期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：226 / 231

页数：6

共 50 条

[41] INELASTIC ELECTRON-ELECTRON SCATTERING TIMES IN SILICON INVERSION-LAYERS
WHEELER, RG
CHOI, KK
GOEL, A
SURFACE SCIENCE, 1982, 113 (1-3) : 523 - 526
[42] PIEZORESISTANCE IN N-CHANNEL INVERSION-LAYERS OF SILICON FILMS ON SAPPHIRE
ZAIMA, S
YASUDA, Y
KAWAGUCHI, S
TSUNEYOSHI, M
NAKAMURA, T
YOSHIDA, A
JOURNAL OF APPLIED PHYSICS, 1986, 60 (11) : 3959 - 3966
[43] BEHAVIOR OF INVERSION-LAYERS IN 3C SILICON-CARBIDE
AVILA, RE
KOPANSKI, JJ
FUNG, CD
APPLIED PHYSICS LETTERS, 1986, 49 (06) : 334 - 336
[44] DE HAAS-VAN-ALPHEN EFFECT IN SILICON INVERSION-LAYERS
FANG, FF
STILES, PJ
SURFACE SCIENCE, 1984, 142 (1-3) : 290 - 293
[45] HIGH-FIELD DRIFT VELOCITY OF HOLES IN INVERSION-LAYERS ON SILICON
NELSON, DF
COOPER, JA
TRETOLA, AR
APPLIED PHYSICS LETTERS, 1982, 41 (09) : 857 - 859
[46] SELF-CONSISTENT CALCULATIONS IN SILICON-CARBIDE INVERSION-LAYERS
OUISSE, T
JOURNAL OF APPLIED PHYSICS, 1994, 75 (04) : 2092 - 2097
[47] LATERAL-SUPERLATTICE EFFECT ON WEAK LOCALIZATION IN SILICON INVERSION-LAYERS
GAO, JR
DEGRAAF, C
SCHUSSLER, AS
CARO, J
RADELAAR, S
HEYERS, K
PHYSICAL REVIEW B, 1992, 46 (15): : 9885 - 9888
[48] HIGH-FIELD DRIFT VELOCITY OF ELECTRONS IN SILICON INVERSION-LAYERS
MODELLI, A
MANZINI, S
SOLID-STATE ELECTRONICS, 1988, 31 (01) : 99 - 104
[49] FINAL-STATE INTERACTION AND INTERSUBBAND SPECTROSCOPY IN SILICON INVERSION-LAYERS
DASSARMA, S
KALIA, RK
NAKAYAMA, M
QUINN, JJ
PHYSICAL REVIEW B, 1981, 24 (12) : 7181 - 7186
[50] MAGNETOCONDUCTANCE DUE TO PARALLEL MAGNETIC-FIELDS IN SILICON INVERSION-LAYERS
MENSZ, PM
WHEELER, RG
PHYSICAL REVIEW B, 1987, 35 (06): : 2844 - 2853

← 1 2 3 4 5 →